@article{discovery10189677, volume = {57}, journal = {Journal of Physics D: Applied Physics}, note = {Original content from this work may be used under the terms of the Creative Commons Attribution 4.0 licence. Any further distribution of this work must maintain attribution to the author(s) and the title of the work, journal citation and DOI.}, number = {25}, year = {2024}, month = {June}, publisher = {IOP Publishing}, title = {High-quality germanium growth on (111)-faceted V-groove silicon by molecular beam epitaxy}, abstract = {High-quality and low-defect-density germanium (Ge) buffer layers on silicon (Si) substrates have long been developed for group IV and III-V devices by suppressing defect propagation during epitaxial growth. This is a crucial step for the development of highly efficient photonic devices on Si substrates. Patterned silicon substrates have increasingly been employed for their ability to restrict and hinder the motion of defects. In this work, we demonstrate the effectiveness of an optimised two-step growth recipe structure on a (111)-faceted V-groove silicon substrate with a 350 nm flat ridge. This strategy succesfully reduces the threading dislocation density while growing a 1 um Ge buffer layer via molecular beam epitaxy. As a result, a high-quality buffer is produced with a low threading dislocation density on the order of 107 cm-2 and a surface roughness below 1 nm.}, url = {http://dx.doi.org/10.1088/1361-6463/ad31e0}, issn = {0022-3727}, author = {Mtunzi, Makhayeni and Jia, Hui and Hou, Yaonan and Yu, Xueying and Zeng, Haotian and Yang, Junjie and Yan, Xingzhao and Skandalos, Ilias and Deng, Huiwen and Park, Jae-seong and Li, Wei and Li, Ang and El Hajraoui, Khalil and Ramasse, Quentin and Gardes, Frederic and Tang, Mingchu and Chen, Siming and Seeds, Alwyn and Liu, Huiyun}, keywords = {V-groove, Aspect ratio trapping, Annealing} }