Zarudnyi, K;
Mehonic, A;
Montesi, L;
Buckwell, M;
Hudziak, S;
Kenyon, AJ;
(2018)
Spike-Timing Dependent Plasticity in Unipolar Silicon Oxide RRAM Devices.
Frontiers in Neuroscience
, 12
, Article 57. 10.3389/fnins.2018.00057.
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Abstract
Resistance switching, or Resistive RAM (RRAM) devices show considerable potential for application in hardware spiking neural networks (neuro-inspired computing) by mimicking some of the behavior of biological synapses, and hence enabling non-von Neumann computer architectures. Spike-timing dependent plasticity (STDP) is one such behavior, and one example of several classes of plasticity that are being examined with the aim of finding suitable algorithms for application in many computing tasks such as coincidence detection, classification and image recognition. In previous work we have demonstrated that the neuromorphic capabilities of silicon-rich silicon oxide (SiOx) resistance switching devices extend beyond plasticity to include thresholding, spiking, and integration. We previously demonstrated such behaviors in devices operated in the unipolar mode, opening up the question of whether we could add plasticity to the list of features exhibited by our devices. Here we demonstrate clear STDP in unipolar devices. Significantly, we show that the response of our devices is broadly similar to that of biological synapses. This work further reinforces the potential of simple two-terminal RRAM devices to mimic neuronal functionality in hardware spiking neural networks.
| Type: | Article |
|---|---|
| Title: | Spike-Timing Dependent Plasticity in Unipolar Silicon Oxide RRAM Devices |
| Open access status: | An open access version is available from UCL Discovery |
| DOI: | 10.3389/fnins.2018.00057 |
| Publisher version: | http://dx.doi.org/10.3389/fnins.2018.00057 |
| Language: | English |
| Additional information: | © 2018 Zarudnyi, Mehonic, Montesi, Buckwell, Hudziak and Kenyon. This is an open-access article distributed under the terms of the Creative Commons Attribution License (CC BY). The use, distribution or reproduction in other forums is permitted, provided the original author(s) and the copyright owner are credited and that the original publication in this journal is cited, in accordance with accepted academic practice. No use, distribution or reproduction is permitted which does not comply with these terms. |
| Keywords: | Resistive switching, resistance switching, STDP, RRAM, machine learning, neuromorphic systems |
| UCL classification: | UCL UCL > Provost and Vice Provost Offices UCL > Provost and Vice Provost Offices > UCL BEAMS UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Engineering Science UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Engineering Science > Dept of Chemical Engineering UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Engineering Science > Dept of Electronic and Electrical Eng |
| URI: | https://discovery-pp.ucl.ac.uk/id/eprint/10042981 |
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