Ponja, SD; Williamson, BAD; Sathasivam, S; Scanlon, DO; Parkin, IP; Carmalt, CJ; (2018) Enhanced electrical properties of antimony doped tin oxide thin films deposited: Via aerosol assisted chemical vapour deposition. Journal of Materials Chemistry C , 6 (27) pp. 7257-7266. 10.1039/c8tc01929k.

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Abstract

Transparent conducting oxides have widespread application in modern society but there is a need to move away from the current 'industry champion' tin doped indium oxide (In2O3:Sn) due to high costs. Antimony doped tin(iv) oxide (ATO) is an excellent candidate but is limited by its opto-electrical properties. Here, we present a novel and scalable synthetic route to ATO thin films that shows excellent electrical properties. Resistivity measurements showed that at 4 at% doping the lowest value of 4.7 × 10-4Ω cm was achieved primarily due to a high charge carrier density of 1.2 × 1021cm-3. Further doping induced an increase in resistivity due to a decrease in both the carrier density and mobility. Ab initio hybrid density functional theory (DFT) calculations show the thermodynamic basis for the tail off of performance beyond a certain doping level, and the appearance of Sb(iii) within the doped thin films.

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