González Burguete, C; (2019) Direct growth of InAsGaSb type II superlattice photodiodes on silicon substrates (II). Presented at: Barlow Memorial Lecture and Prizegiving 2019, London, UK.

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Text Direct growth of InAsGaSb type II superlattice photodiodes on silicon substrates - July 2019 (final).pdf - Submitted Version Download (3MB) | Preview

Abstract

The project is creating of an InAs/GaSb* type II superlattice (T2SL) MWIR (mid-wave infrared) photodiode directly grown on Si substrate for use in an infrared CMOS camera. The first step towards this goal was to compare the basic nip structure grown directly on Si substrate with the same structure grown also on GaAs substrate. This Si structure was the first structure grown using a molecular beam epitaxy machine (MBE), which was built by the MBE group at UCL. The results obtained from the GaAs structure and the Si structure are similar in structural and optical properties. The only significant difference was the photoluminescence peak of Si structure which was 39% lower than the one of the GaAs structure[2]. The current project compares three basic photodiode structures nip, pin and piBn (with barrier) grown all on GaAs substrates to maximise the electrical and optical outputs. The goal was obtaining detailed analysis of each structure in order to find the structure that yields the best results in order to transfer this onto a Si substrate. The new structure to be grown on Si substrate is therefore expected to have improved electrical and optical performance.

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