Douglas, SP; Knapp, CE; (2020) Low-Temperature Deposition of Highly Conductive Aluminum Metal Films on Flexible Substrates Using Liquid Alane MOD Precursors. ACS Applied Materials and Interfaces , 12 (23) pp. 26193-26199. 10.1021/acsami.0c05429.

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Abstract

Metal-organic decomposition (MOD) precursor inks are emerging as the new route to low-temperature deposition of highly conductive metals, owing to the tunability of their decomposition. New methods of printing are being investigated to help negate the progressive issues of the electronics industry, not least the movement toward low-cost polymers and paper substrates. Informed precursor design is crucial if achieving materials capable of this is possible. In this work, the liquid MOD precursors, dimethylethylamine alane (DMEAA) and trimethylamine alane (TEAA), have been used to deposit a highly conductive aluminum (Al) metal with resistivities in the range of 4.10 × 10-5 to 5.32 × 10-7 Ω m (mean electrical resistivity of 8 × 10-6 Ω m, approximately 300 times more resistive than bulk Al metal), without the need for an additional solvent, at low temperatures (100 and 120 °C), on a range of substrates including glass, polyimide, polyethylene terephthalate, and paper. Conductive coatings have been analyzed using X-ray diffraction, scanning electron microscopy, energy-dispersive X-ray spectroscopy, X-ray photoelectron spectroscopy and resistivity measurements; as a proof of concept, Al deposited on paper has been used in an electrical circuit. Results indicate that DMEAA is a better precursor, producing more conductive films, which is explained by its lower decomposition temperature and higher Al weight loading, indicating potential for significant industrial application.

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