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n-Type conducting P doped ZnO thin films via chemical vapor deposition

Zhao, D; Li, J; Sathasivam, S; Carmalt, CJ; (2020) n-Type conducting P doped ZnO thin films via chemical vapor deposition. RSC Advances , 10 (57) pp. 34527-34533. 10.1039/d0ra05667g. Green open access

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Abstract

Extrinsically doped ZnO thin films are of interest due to their high electrical conductivity and transparency to visible light. In this study, P doped ZnO thin films were grown on glass substrates via aerosol assisted chemical vapour deposition. The results show that P is a successful dopant for ZnO in the V+ oxidation state and is able to reduce resistivity to 6.0 × 10−3 Ω cm while maintaining visible light transmittance at ∼75%. The thins films were characterized by X-ray diffraction studies that showed only Bragg peaks for the wurtzite ZnO phase. Fitting of the diffraction data to a Le Bail model also showed a general expansion of the ZnO unit cell upon doping due to the substitution of Zn2+ ions with the larger P5+.

Type: Article
Title: n-Type conducting P doped ZnO thin films via chemical vapor deposition
Open access status: An open access version is available from UCL Discovery
DOI: 10.1039/d0ra05667g
Publisher version: https://doi.org/10.1039/d0ra05667g
Language: English
Additional information: This article is licensed under a Creative Commons Attribution 3.0 Unported Licence. See here: https://creativecommons.org/licenses/by/3.0/
UCL classification: UCL
UCL > Provost and Vice Provost Offices > UCL BEAMS
UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Maths and Physical Sciences
UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Maths and Physical Sciences > Dept of Chemistry
URI: https://discovery-pp.ucl.ac.uk/id/eprint/10111158
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