Zhao, D;
Li, J;
Sathasivam, S;
Carmalt, CJ;
(2020)
n-Type conducting P doped ZnO thin films via chemical vapor deposition.
RSC Advances
, 10
(57)
pp. 34527-34533.
10.1039/d0ra05667g.
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Abstract
Extrinsically doped ZnO thin films are of interest due to their high electrical conductivity and transparency to visible light. In this study, P doped ZnO thin films were grown on glass substrates via aerosol assisted chemical vapour deposition. The results show that P is a successful dopant for ZnO in the V+ oxidation state and is able to reduce resistivity to 6.0 × 10−3 Ω cm while maintaining visible light transmittance at ∼75%. The thins films were characterized by X-ray diffraction studies that showed only Bragg peaks for the wurtzite ZnO phase. Fitting of the diffraction data to a Le Bail model also showed a general expansion of the ZnO unit cell upon doping due to the substitution of Zn2+ ions with the larger P5+.
Type: | Article |
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Title: | n-Type conducting P doped ZnO thin films via chemical vapor deposition |
Open access status: | An open access version is available from UCL Discovery |
DOI: | 10.1039/d0ra05667g |
Publisher version: | https://doi.org/10.1039/d0ra05667g |
Language: | English |
Additional information: | This article is licensed under a Creative Commons Attribution 3.0 Unported Licence. See here: https://creativecommons.org/licenses/by/3.0/ |
UCL classification: | UCL UCL > Provost and Vice Provost Offices > UCL BEAMS UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Maths and Physical Sciences UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Maths and Physical Sciences > Dept of Chemistry |
URI: | https://discovery-pp.ucl.ac.uk/id/eprint/10111158 |
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