Strand, J;
Shluger, A;
(2019)
Correlated Defect Creation in HfO2 films.
In:
2018 International Integrated Reliability Workshop (IIRW).
(pp. pp. 19-20).
IEEE: South Lake Tahoe, CA, USA.
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Abstract
Spatially correlated defect generation process has been proposed to be responsible for TDDB Weibull slope measured in HfO 2 . We investigated possible mechanisms for correlated defect production in amorphous (a) HfO 2 films under applied stress bias using ab initio simulations. During bias application, electron injection into these films leads to the localization of up to two electrons at intrinsic trapping sites present due to the structural disorder in amorphous structures and to formation of O vacancies. Trapping of two extra electrons at a pre-exiting O vacancy facilitate the formation of a new vacancies affecting TDDB statistics and its dependence on the film thickness.
| Type: | Proceedings paper |
|---|---|
| Title: | Correlated Defect Creation in HfO2 films |
| Event: | IEEE International Integrated Reliability Workshop (IIRW) |
| Location: | South Lake Tahoe, CA |
| Dates: | 07 October 2018 - 11 October 2018 |
| Open access status: | An open access version is available from UCL Discovery |
| DOI: | 10.1109/IIRW.2018.8727085 |
| Publisher version: | https://doi.org/10.1109/IIRW.2018.8727085 |
| Language: | English |
| Additional information: | This version is the author accepted manuscript. For information on re-use, please refer to the publisher’s terms and conditions. |
| Keywords: | DFT calculations; Defect creation, Dielectric breakdown, Amorphous HfO2 |
| UCL classification: | UCL UCL > Provost and Vice Provost Offices UCL > Provost and Vice Provost Offices > UCL BEAMS UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Maths and Physical Sciences UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Maths and Physical Sciences > Dept of Physics and Astronomy |
| URI: | https://discovery-pp.ucl.ac.uk/id/eprint/10123098 |
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