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Improving the accuracy of defect mobilities and observing interface effects of resistive switching memories using the current transient phenomenon

Mannion, DJ; Ng, WH; Mehonic, A; Kenyon, A; (2021) Improving the accuracy of defect mobilities and observing interface effects of resistive switching memories using the current transient phenomenon. Presented at: Materials Challenges for Memory, Virtual conference. Green open access

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Type: Poster
Title: Improving the accuracy of defect mobilities and observing interface effects of resistive switching memories using the current transient phenomenon
Event: Materials Challenges for Memory
Location: Virtual conference
Dates: 11 - 13 April 2021
Open access status: An open access version is available from UCL Discovery
Publisher version: https://publishing.aip.org/resources/horizons-conf...
Language: English
Keywords: vacancy, mobility, memristor, rram
UCL classification: UCL
UCL > Provost and Vice Provost Offices
UCL > Provost and Vice Provost Offices > UCL BEAMS
UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Engineering Science
UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Engineering Science > Dept of Electronic and Electrical Eng
UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Engineering Science > Engineering Science Faculty Office
URI: https://discovery-pp.ucl.ac.uk/id/eprint/10125847
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