Murata, Koichi;
Yagi, Shuhei;
Kanazawa, Takashi;
Tsubomatsu, Satoshi;
Kirkham, Christopher;
Nittoh, Koh-ichi;
Bowler, David R;
(2022)
Activation of two dopants, Bi and Er in delta-doped layer in Si crystal.
Nano Futures
, 5
(4)
, Article 045005. 10.1088/2399-1984/ac421d.
Preview |
Text
Main_manuscript.pdf - Accepted Version Download (7MB) | Preview |
Abstract
Conventional doping processes are no longer viable for realizing extreme structures, such as a δ-doped layer with multiple elements, such as the heavy Bi, within the silicon crystal. Here, we demonstrate the formation of (Bi + Er)-δ-doped layer based on surface nanostructures, i.e. Bi nanolines, as the dopant source by molecular beam epitaxy. The concentration of both Er and Bi dopants is controlled by adjusting the amount of deposited Er atoms, the growth temperature during Si capping and surfactant techniques. Subsequent post-annealing processing is essential in this doping technique to obtain activated dopants in the δ-doped layer. Electric transport measurement and photoluminescence study revealed that both Bi and Er dopants were activated after post-annealing at moderate temperature.
| Type: | Article |
|---|---|
| Title: | Activation of two dopants, Bi and Er in delta-doped layer in Si crystal |
| Open access status: | An open access version is available from UCL Discovery |
| DOI: | 10.1088/2399-1984/ac421d |
| Publisher version: | https://doi.org/10.1088/2399-1984/ac421d |
| Language: | English |
| Additional information: | This version is the author accepted manuscript. For information on re-use, please refer to the publisher's terms and conditions. |
| UCL classification: | UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Maths and Physical Sciences UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Maths and Physical Sciences > Dept of Physics and Astronomy UCL > Provost and Vice Provost Offices > UCL BEAMS UCL |
| URI: | https://discovery-pp.ucl.ac.uk/id/eprint/10143363 |
Archive Staff Only
 |
View Item |
