Sebek, Matej; (2022) Transition metal dichalcogenides for optoelectronic applications. Doctoral thesis (Ph.D), UCL (University College London).

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Abstract

Transition metal dichalcogenides (TMDs) in their two-dimensional form have been subjects of fruitful research for the past ten years. Currently, these materials are promising candidates for the next generation transistors and optoelectronic devices. However, certain challenges such as easy and damage-free integration of gate dielectrics, low quantum photoluminescence (PL) yield, and weak light-matter interaction of the monolayers of these materials need to be addressed. The research of this thesis covers challenges in three areas at the interface between materials science and optoelectronic science: • For the first time, this work demonstrates a method for a damage-free and doping-free integration of thin layers of high-k dielectric materials into van der Waals devices. Encapsulation of TMDs monolayers with these layers is demonstrated and thoroughly analyzed. • The chemical treatment of monolayer TMDs enables a dramatic increase in the PL yield. This work extends the range of materials accessible for the treatment with a superacid dedoping the materials and analyses the behavior of a variety of crystals subject to the treatment. • The utilization of hybrid structure combining multilayer optical coating with 2D materials strengthens or tunes the light-matter interaction. In this work, we describe the optimization of surface plasmon resonance (SPR) sensors with 2D materials and we exhibit the use of a Fabry-Perot cavity to enhance the excitonic resonance within a WS2 monolayer in an electro-optical modulator.

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