Guo, Daqian;
Huang, Jian;
Benamara, Mourad;
Mazur, Yuriy I;
Deng, Zhuo;
Salamo, Gregory J;
Liu, Huiyun;
... Wu, Jiang; + view all
(2023)
High operating temperature mid-infrared InGaAs/GaAs submonolayer quantum dot quantum cascade detectors on silicon.
IEEE Journal of Quantum Electronics
10.1109/jqe.2023.3238754.
(In press).
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Abstract
Monolithic integration of infrared photodetectors on a silicon platform is a promising solution for the development of scalable and affordable photodetectors and infrared focal plane arrays. We report on integration of submonolayer quantum dot quantum cascade detectors (SML QD QCDs) on Si substrates via direct growth. Threading dislocation density has been reduced to the level of ~10 7 cm -2 with the high-quality GaAs-on-Si virtual substrate. We also conducted a morphology analysis for the SML QD QCDs through a transmission electron microscope strain contrast image and to the best of our knowledge, high quality InGaAs/GaAs SML QDs were clearly observed on silicon for the first time. Photoluminescence decay time of the as-grown SML QD QCDs on Si was measured to be around 300 ps, which is comparable to the reference QCDs on lattice-matched GaAs substrates. With the high-quality III-V epitaxial layers and SML QDs, the quantum cascade detectors on Si achieved a normal incident photoresponse temperature up to 160 K under zero bias.
| Type: | Article |
|---|---|
| Title: | High operating temperature mid-infrared InGaAs/GaAs submonolayer quantum dot quantum cascade detectors on silicon |
| Open access status: | An open access version is available from UCL Discovery |
| DOI: | 10.1109/jqe.2023.3238754 |
| Publisher version: | https://doi.org/10.1109/JQE.2023.3238754 |
| Language: | English |
| Additional information: | This version is the author accepted manuscript. For information on re-use, please refer to the publisher’s terms and conditions. |
| Keywords: | Silicon, Gallium arsenide, Substrates, Detectors, Strain, Quantum dots, Quantum cascade lasers |
| UCL classification: | UCL UCL > Provost and Vice Provost Offices > UCL BEAMS UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Engineering Science UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Engineering Science > Dept of Electronic and Electrical Eng |
| URI: | https://discovery-pp.ucl.ac.uk/id/eprint/10163802 |
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