Deng, H;
Yang, J;
Jia, H;
Tang, M;
Maglio, B;
Jarvis, L;
Shutts, S;
... Liu, H; + view all
(2022)
Si-based 1.3 μm InAs/GaAs QD Lasers.
In:
Proceedings of the IEEE Photonics Conference (IPC) 2022.
(pp. pp. 1-2).
Institute of Electrical and Electronics Engineers (IEEE)
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Abstract
The effects of implementing Ge and Si buffer layers on the performance of Si-based InAs/GaAs quantum dot lasers have been investigated in this paper. The laser performance has been improved significantly by utilising group-IV buffer layers.
| Type: | Proceedings paper |
|---|---|
| Title: | Si-based 1.3 μm InAs/GaAs QD Lasers |
| Event: | 2022 IEEE Photonics Conference, IPC 2022 |
| Dates: | 13th-17th November 2022 |
| ISBN-13: | 9781665434874 |
| Open access status: | An open access version is available from UCL Discovery |
| DOI: | 10.1109/IPC53466.2022.9975521 |
| Publisher version: | https://doi.org/10.1109/IPC53466.2022.9975521 |
| Language: | English |
| Additional information: | This version is the author accepted manuscript. For information on re-use, please refer to the publisher's terms and conditions. |
| UCL classification: | UCL UCL > Provost and Vice Provost Offices > UCL BEAMS UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Engineering Science UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Engineering Science > Dept of Electronic and Electrical Eng |
| URI: | https://discovery-pp.ucl.ac.uk/id/eprint/10164299 |
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