Hou, Y;
Skandalos, I;
Tang, M;
Jia, H;
Deng, H;
Yu, X;
Noori, Y;
... Gardes, F; + view all
(2023)
Surface/interface engineering of InAs quantum dot edge-emitting diodes toward III-V/SiN photonic integration.
Journal of Luminescence
, 258
, Article 119799. 10.1016/j.jlumin.2023.119799.
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Abstract
We investigate the surface and interface engineering on InAs quantum dot (QD) emitters, by fabricating and measuring a series of edge-emitting light-emitting diodes. These diodes are encapsulated with non-stoichiometric silicon nitride (SiN) layers with various refractive indices. By analysing the optical and electrical characteristics, it is concluded that Si-rich SiN is an excellent candidate for both electrical and optical passisvations with reduced surface recombination. While the N-rich SiN deposited by the same method shows an improved device performance under optical pumping, the passivation does not appear to be as effective under electrical injection. Our findings provide important information related to the surface engineering of the interface between InAs QD stacks and non-stoichiometric SiN materials, which is arguably one of the crucial steps required to establish monolithic integration of InAs QD emitters with CMOS photonics components.
| Type: | Article |
|---|---|
| Title: | Surface/interface engineering of InAs quantum dot edge-emitting diodes toward III-V/SiN photonic integration |
| Open access status: | An open access version is available from UCL Discovery |
| DOI: | 10.1016/j.jlumin.2023.119799 |
| Publisher version: | https://doi.org/10.1016/j.jlumin.2023.119799 |
| Language: | English |
| Additional information: | This work is licensed under a Creative Commons Attribution 4.0 International License. The images or other third-party material in this article are included in the Creative Commons license, unless indicated otherwise in the credit line; if the material is not included under the Creative Commons license, users will need to obtain permission from the license holder to reproduce the material. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/ |
| Keywords: | InAs, Quantum dot, Silicon nitride, Surface passivation, Photonic integration |
| UCL classification: | UCL UCL > Provost and Vice Provost Offices > UCL BEAMS UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Engineering Science UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Engineering Science > Dept of Electronic and Electrical Eng |
| URI: | https://discovery-pp.ucl.ac.uk/id/eprint/10167412 |
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