D'Anna, Nicolò;
Ferreira Sanchez, Dario;
Matmon, Guy;
Bragg, Jamie;
Constantinou, Procopios C;
Stock, Taylor JZ;
Fearn, Sarah;
... Aeppli, Gabriel; + view all
(2023)
Non‐Destructive X‐Ray Imaging of Patterned Delta‐Layer Devices in Silicon.
Advanced Electronic Materials
10.1002/aelm.202201212.
(In press).
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Abstract
The progress of miniaturization in integrated electronics has led to atomic and nanometer-sized dopant devices in silicon. Such structures can be fabricated routinely by hydrogen resist lithography, using various dopants such as P and As. However, the ability to non-destructively obtain atomic-species-specific images of the final structure, which would be an indispensable tool for building more complex nano-scale devices, such as quantum co-processors, remains an unresolved challenge. Here, X-ray fluorescence is exploited to create an element-specific image of As dopants in Si, with dopant densities in absolute units and a resolution limited by the beam focal size (here ≈1 µm), without affecting the device's low temperature electronic properties. The As densities provided by the X-ray data are compared to those derived from Hall effect measurements as well as the standard non-repeatable, scanning tunneling microscopy and secondary ion mass spectroscopy, techniques. Before and after the X-ray experiments, we also measured the magneto-conductance, which is dominated by weak localization, a quantum interference effect extremely sensitive to sample dimensions and disorder. Notwithstanding the 1.5 × 10^{10} Sv (1.5 × 10^{16} Rad cm^{−2}) exposure of the device to X-rays, all transport data are unchanged to within experimental errors, corresponding to upper bounds of 0.2 Angstroms for the radiation-induced motion of the typical As atom and 3% for the loss of activated, carrier-contributing dopants. With next generation synchrotron radiation sources and more advanced optics, the authors foresee that it will be possible to obtain X-ray images of single dopant atoms within resolved radii of 5 nm.
| Type: | Article |
|---|---|
| Title: | Non‐Destructive X‐Ray Imaging of Patterned Delta‐Layer Devices in Silicon |
| Open access status: | An open access version is available from UCL Discovery |
| DOI: | 10.1002/aelm.202201212 |
| Publisher version: | https://doi.org/10.1002/aelm.202201212 |
| Language: | English |
| Additional information: | © 2023 The Authors. Advanced Electronic Materials published by Wiley-VCH GmbH. This is an open access article under the terms of the Creative Commons Attribution License (http://creativecommons.org/licenses/by/4.0/). |
| Keywords: | doped silicon devices, non-destructive sub-surface imaging, X-ray fluorescence |
| UCL classification: | UCL UCL > Provost and Vice Provost Offices > UCL BEAMS UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Engineering Science UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Engineering Science > Dept of Electronic and Electrical Eng |
| URI: | https://discovery-pp.ucl.ac.uk/id/eprint/10167842 |
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