Constantinou, Procopios;
Stock, Taylor JZ;
Crane, Eleanor;
Kölker, Alexander;
Van Loon, Marcel;
Li, Juerong;
Fearn, Sarah;
... Schofield, Steven R; + view all
(2023)
Momentum space imaging of ultra-thin electron liquids in δ-doped silicon.
Advanced Science
, 10
(27)
, Article 2302101. 10.1002/advs.202302101.
Preview |
Text
Schofield_Momentum‐Space Imaging of Ultra‐Thin Electron Liquids in ‐Doped Silicon.pdf Download (2MB) | Preview |
Abstract
Two-dimensional dopant layers (δ-layers) in semiconductors provide the high-mobility electron liquids (2DELs) needed for nanoscale quantum-electronic devices. Key parameters such as carrier densities, effective masses, and confinement thicknesses for 2DELs have traditionally been extracted from quantum magnetotransport. In principle, the parameters are immediately readable from the one-electron spectral function that can be measured by angle-resolved photoemission spectroscopy (ARPES). Here, buried 2DEL δ-layers in silicon are measured with soft X-ray (SX) ARPES to obtain detailed information about their filled conduction bands and extract device-relevant properties. This study takes advantage of the larger probing depth and photon energy range of SX-ARPES relative to vacuum ultraviolet (VUV) ARPES to accurately measure the δ-layer electronic confinement. The measurements are made on ambient-exposed samples and yield extremely thin (< 1 nm) and dense (≈1014 cm−2) 2DELs. Critically, this method is used to show that δ-layers of arsenic exhibit better electronic confinement than δ-layers of phosphorus fabricated under identical conditions.
| Type: | Article |
|---|---|
| Title: | Momentum space imaging of ultra-thin electron liquids in δ-doped silicon |
| Open access status: | An open access version is available from UCL Discovery |
| DOI: | 10.1002/advs.202302101 |
| Publisher version: | https://doi.org/10.1002/advs.202302101 |
| Language: | English |
| Additional information: | Copyright © 2023 The Authors. Advanced Science published by Wiley-VCH GmbH. This is an open access article under the terms of the Creative Commons Attribution License, https://creativecommons.org/licenses/by/4.0/, which permits use, distribution and reproduction in any medium, provided the original work is properly cited. |
| Keywords: | 2DEG, ARPES, arsenic in silicon, delta layer, silicon, soft X-ray angle-resolved photoelectron spectroscopy (soft X-ray ARPES) |
| UCL classification: | UCL UCL > Provost and Vice Provost Offices > UCL BEAMS UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Maths and Physical Sciences UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Maths and Physical Sciences > London Centre for Nanotechnology |
| URI: | https://discovery-pp.ucl.ac.uk/id/eprint/10172902 |
Archive Staff Only
 |
View Item |
