Jia, Hui; (2023) Growth of Group IV and III-V Semiconductor Materials for Silicon Photonics: Buffer Layer and Light Source Development. Doctoral thesis (Ph.D), UCL (University College London).

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Abstract

High data transmission speeds, high levels of integration, and low manufacturing costs have established Si photonics as a crucial technology for next-generation data interconnects and communications systems. It involves a variety of components including light emitters, photodetectors, amplifiers, waveguides, modulators, and more. Because of its indirect bandgap, silicon is unable to serve as an efficient light source on a chip, hence this has been one of the formidable challenges. Within the framework of the monolithic approach, this thesis presents the study of two essential aspects of this challenge, the optimisation of buffer layers and development of light sources, by incorporating and improving different systems of Group IV thin films and III-V quantum dots (QDs) semiconductor materials. The monolithic approach focuses on the direct epitaxial growth of highly efficient light sources, usually by the epitaxy of III-V semiconductors lasers on a single Si chip. However, because of the material dissimilarities between III-V materials and Si, during the heteroepitaxy, a high density of crystalline defects such as threading dislocations (TDs), thermal cracks and anti-phase domains are introduced, severely impeding the performance and yield of the laser. For instance, TDs act as non-radiative recombination centres, while thermal cracks cause issues with the efficient evanescent coupling of the emitted light with Si waveguide. To address these defects, typically complex buffer growth techniques with micron-scale thickness are employed. The research in this thesis is divided into two parts, namely buffer layer optimisation and light source development. Each part outlines alternative strategies for overcoming the above-mentioned hurdles for monolithic growth. The first part highlights the optimisation of buffer layer growth to reduce threading dislocations for the monolithic integration of high-performance direct-bandgap III-V and group IV light sources on Si. The growth optimisation of low defect-density Ge buffer layers epitaxially grown on Si was first investigated. Defect elimination in Ge buffers with doped and undoped seed layers of increasing total thickness is studied under a variety of growth regimes, doping techniques, and annealing processes. This study demonstrates that a 500 nm thin Ge achieves the same defect level (1.3 × 108 cm -2) as 2.2 μm GaAs grown on Si, which greatly increases the thickness budget for the subsequent dislocation filter layers (DFLs) and laser structure growth before the formation of thermal cracks. Meanwhile, a low threading dislocation density of 3.3 × 107 cm -2 is obtained for 1 μm Ge grown on Si. The second part places emphasis on the development of light sources in the near-infrared wavelength range for Si photonics. 1) The development of GeSn, an emerging direct bandgap light source for Si photonics, is shown, which has wide bandgap tuneability and full compatibility with Si complementary metal-oxide semiconductor (CMOS). Growing the high Sn composition of GeSn required for efficient light generation is challenging and its growth generally severely affected by large surface roughness and Sn segregation. In this work, first, ex-situ rapid thermal annealing for the grown GeSn layer is investigated, showing that by proper annealing the strain can be relaxed by 90% without intriguing Sn segregation. This method shows its potential for both material growth and device fabrication. Besides, strain compensated layer and in-situ annealing techniques have been developed. Significantly improved surface quality has been confirmed by in-situ reflection high-energy electron diffraction (RHEED) observations and atomic force microscopy (AFM) images. Transmission electron microscopy (TEM) results reveal the high crystal quality of the multiple quantum wells (MQWs) grown on such buffer layers. 2) The final section details the development of InAs/InP QDs emitting near the strategic 1.55 μm, the lowest optical fibre loss window. The InAs/InP QDs growth is prone to inhomogeneous quantum dash morphologies which broaden the photoluminescence (PL) spectra and degrade the carrier confinement. Research has been conducted on growth parameters and techniques including deposition thickness, growth temperature and Indium-flush technique is applied to improve the uniformity of the dots, and narrow room temperature PL linewidths of 47.9 meV and 50.9 meV have been achieved for single-layer and five-layer quantum dot samples, respectively. The structures enable the fabrication of small footprint microdisk lasers with lasing thresholds as low as 30 μW.

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