Xhameni, Aferdita;
Almutairi, AbdulAziz;
Lombardo, Antonio;
(2023)
Oxidation of van-der-Waals Semiconductors for Neuromorphic Technology.
In:
Proceedings of the 2023 IEEE Nanotechnology Materials and Devices Conference (NMDC).
(pp. pp. 529-531).
IEEE: Salerno, Italy.
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Abstract
Here, we report novel resistive memories based on oxides obtained by the chemical conversion of a two-dimensional van-der-Waals semiconductor: hafnium disulfide (HfS2). We apply a dry oxidation method, carefully controlling process parameters such as pressure, temperature, and oxygen flow. Hafnium oxides are integrated into crossbar structures, and resistive switching is studied by applying voltage ramps. We demonstrate unipolar switching achieving a RON/R-OFF ratio of ∼ 10⁴ over 115 cycles, showing the potential of this approach for next-generation memristive technology.
| Type: | Proceedings paper |
|---|---|
| Title: | Oxidation of van-der-Waals Semiconductors for Neuromorphic Technology |
| Event: | 2023 IEEE Nanotechnology Materials and Devices Conference (NMDC) |
| Dates: | 22 Oct 2023 - 25 Oct 2023 |
| ISBN-13: | 9798350335460 |
| Open access status: | An open access version is available from UCL Discovery |
| DOI: | 10.1109/NMDC57951.2023.10343949 |
| Publisher version: | https://doi.org/10.1109/NMDC57951.2023.10343949 |
| Language: | English |
| Additional information: | This version is the author-accepted manuscript. For information on re-use, please refer to the publisher’s terms and conditions. |
| Keywords: | Neuromorphics, Random access memory, Process control, Voltage, Switches, Programming, Oxidation |
| UCL classification: | UCL UCL > Provost and Vice Provost Offices > UCL BEAMS UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Maths and Physical Sciences UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Maths and Physical Sciences > London Centre for Nanotechnology |
| URI: | https://discovery-pp.ucl.ac.uk/id/eprint/10190392 |
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