Gardener, JA;
Liaw, I;
Aeppli, G;
Boyd, IW;
Chater, RJ;
Jones, TS;
McPhail, DS;
... Heutz, S; + view all
(2010)
A novel route for the inclusion of metal dopants in silicon.
NANOTECHNOLOGY
, 21
(2)
, Article 025304. 10.1088/0957-4484/21/2/025304.
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Abstract
We report a new method for introducing metal atoms into silicon wafers, using negligible thermal budget. Molecular thin films are irradiated with ultra-violet light releasing metal species into the semiconductor substrate. Secondary ion mass spectrometry and x-ray absorption spectroscopy show that Mn is incorporated into Si as an interstitial dopant. We propose that our method can form the basis of a generic low-cost, low-temperature technology that could lead to the creation of ordered dopant arrays.
| Type: | Article |
|---|---|
| Title: | A novel route for the inclusion of metal dopants in silicon |
| Open access status: | An open access version is available from UCL Discovery |
| DOI: | 10.1088/0957-4484/21/2/025304 |
| Publisher version: | http://dx.doi.org/10.1088/0957-4484/21/2/025304 |
| Language: | English |
| Additional information: | Text made available to UCL Discovery by kind permission of IOP Publishing, 2012 |
| Keywords: | PHTHALOCYANINE THIN-FILMS, ION MASS-SPECTROMETRY, MANGANESE, OXYGEN, GAAS, LAMP, MN, SI |
| UCL classification: | UCL UCL > Provost and Vice Provost Offices > UCL BEAMS UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Maths and Physical Sciences UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Maths and Physical Sciences > Dept of Chemistry |
| URI: | https://discovery-pp.ucl.ac.uk/id/eprint/112726 |
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