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Submonolayer InGaAs/GaAs quantum dot solar cells

Lam, P; Wu, J; Tang, M; Jiang, Q; Hatch, S; Beanland, R; Wilson, J; ... Liu, H; + view all (2014) Submonolayer InGaAs/GaAs quantum dot solar cells. SOLAR ENERGY MATERIALS AND SOLAR CELLS , 126 83 - 87. 10.1016/j.solmat2014.03.046. Green open access

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Abstract

Optical and structural properties of submonolayer InGaAs/GaAs quantum dot solar cells (SML-QDSCs) are investigated and compared with quantum well solar cells (QWSCs). Compared with InGaAs/GaAs QWSCs with a similar structure, the material quality for SML QDSCs is significantly improved with a reduced density of both crosshatch patterns and defects. This coincides with a much higher photoluminescence intensity obtained for SML QDSCs. SML QDSCs thus exhibit an increase in open circuit voltage of 70 meV and an improvement in short circuit current from 15.9 mA/cm2 to 17.7 mA/cm2 in comparison with QWSCs. These findings present a promising alternative to quantum wells in photovoltaic applications.

Type: Article
Title: Submonolayer InGaAs/GaAs quantum dot solar cells
Open access status: An open access version is available from UCL Discovery
DOI: 10.1016/j.solmat2014.03.046
Publisher version: http://dx.doi.org/10.1016/j.solmat2014.03.046
Additional information: © 2014 The Authors. Published by Elsevier B.V. This is an open access article under the CC BY license (http://creativecommons.org/licenses/by/3.0/).
Keywords: Solar cells, III-V semiconductors, Submonolayer, Quantum dots, Molecular beam epitaxy
UCL classification: UCL
UCL > Provost and Vice Provost Offices > UCL BEAMS
UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Engineering Science
UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Engineering Science > Dept of Electronic and Electrical Eng
URI: https://discovery-pp.ucl.ac.uk/id/eprint/1448765
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