Kenyon, AJ; (2005) Erbium in silicon. Semiconductor Science and Technology , 20 (12) R65 -R84. 10.1088/0268-1242/20/12/R02.

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Abstract

The overlap of the principal luminescence band of the erbium ion with the low-loss optical transmission window of silica optical fibres, along with the drive for integration of photonics and silicon technology, has generated intense interest in doping silicon with erbium to produce a silicon-based optical source. Silicon is a poor photonic material due to its very short non-radiative lifetime and indirect band gap, but it has been hoped that the incorporation of optically active erbium ions into silicon will permit the development of silicon-based light sources that will interface with both CMOS technology and optical fibre communications. Some years into this activity, there have now been a wide range of experimental studies of material growth techniques, optical, physical and electrical properties, along with a considerable body of theoretical work dealing with the site of the erbium ion in silicon, along with activation and deactivation processes. This paper reviews the current state of what remains an active field, summarizing results from a range of studies conducted over the last few years, and points to further developments by considering the prospects for successful photonic integration of erbium and silicon.

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