Cerbu, F;
Madia, O;
Andreev, DV;
Fadida, S;
Eizenberg, M;
Breuil, L;
Lisoni, JG;
... Stesmans, A; + view all
(2016)
Intrinsic electron traps in atomic-layer deposited HfO2 insulators.
Applied Physics Letters
, 108
(22)
, Article 222901. 10.1063/1.4952718.
Preview |
Text (Published article)
Cerbu_Intrinsic electron traps in atomic-layer deposited HfO2 insulators.pdf - Published Version Download (1MB) | Preview |
Preview |
Text (Supplementary information)
Cerbu_Intrinsic electron traps in atomic-layer deposited HfO2 insulators Supplementary.pdf - Accepted Version Download (284kB) | Preview |
Abstract
Analysis of photodepopulation of electron traps in HfO2 films grown by atomic layer deposition is shown to provide the trap energy distribution across the entire oxide bandgap. The presence is revealed of two kinds of deep electron traps energetically distributed at around Et ≈ 2.0 eV and Et ≈ 3.0 eV below the oxide conduction band. Comparison of the trapped electron energy distributions in HfO2 layers prepared using different precursors or subjected to thermal treatment suggests that these centers are intrinsic in origin. However, the common assumption that these would implicate O vacancies cannot explain the charging behavior of HfO2, suggesting that alternative defect models should be considered.
| Type: | Article |
|---|---|
| Title: | Intrinsic electron traps in atomic-layer deposited HfO2 insulators |
| Open access status: | An open access version is available from UCL Discovery |
| DOI: | 10.1063/1.4952718 |
| Publisher version: | http://dx.doi.org/10.1063/1.4952718 |
| Language: | English |
| Additional information: | The following article appeared in Applied Physics Letters [Cerbu, F; Madia, O; Andreev, DV; Fadida, S; Eizenberg, M; Breuil, L; Lisoni, JG; (2016) Intrinsic electron traps in atomic-layer deposited HfO2 insulators. Applied Physics Letters, 108 (22), Article 222901. 10.1063/1.4952718] and may be found at http://dx.doi.org/10.1063/1.4952718. This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. |
| Keywords: | Science & Technology, Physical Sciences, Physics, Applied, Physics, Gate Dielectrics, Flash Memory, Reliability, Technology, (100)SI, Photoemission, Oxides, Kappa, Holes, ZRO2 |
| UCL classification: | UCL UCL > Provost and Vice Provost Offices > UCL BEAMS UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Maths and Physical Sciences UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Maths and Physical Sciences > Dept of Physics and Astronomy |
| URI: | https://discovery-pp.ucl.ac.uk/id/eprint/1508610 |
Archive Staff Only
 |
View Item |
