Controlling domain wall pinning in planar nanowires by selecting domain wall type and its application in a memory concept

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Controlling domain wall pinning in planar nanowires by selecting domain wall type and its application in a memory concept

Atkinson, D; Eastwood, DS; Bogart, LK; (2008) Controlling domain wall pinning in planar nanowires by selecting domain wall type and its application in a memory concept. Applied Physics Letters , 92 (2) , Article 022510. 10.1063/1.2832771. Green open access

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Abstract

Here, we report on the control of domain wall pinning at notch features patterned in Permalloy planar nanowires by selecting the micromagnetic configuration of the domain wall using a transverse magnetic field. The domain wall behavior was investigated both experimentally using focused magneto-optic Kerr effect measurements of lithographically patterned nanowires and with micromagnetic simulations. The pinning behavior observed is utilized in a concept for multibit memory cells applicable as the free layer in magnetic random access memory where the domain structure is defined by the location of domain walls that either pin or passby pinning structures depending upon the domain wall configuration selected.

Type:	Article
Title:	Controlling domain wall pinning in planar nanowires by selecting domain wall type and its application in a memory concept
Open access status:	An open access version is available from UCL Discovery
DOI:	10.1063/1.2832771
Publisher version:	https://doi.org/10.1063/1.2832771
Language:	English
Additional information:	This is the published version of record. For information on re-use, please refer to the publisher’s terms and conditions.
UCL classification:	UCL UCL > Provost and Vice Provost Offices > UCL BEAMS UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Engineering Science UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Engineering Science > Dept of Chemical Engineering
URI:	https://discovery-pp.ucl.ac.uk/id/eprint/1558908