Chiatti, O; Warburton, PA; (2010) Low-temperature transport in ultra-thin tungsten films grown by focused-ion-beam deposition. Presented at: IOP Superconductivity Group Summer Science Meeting 2010, The Institute of Physics, London, UK.

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Abstract

We have fabricated tungsten-containing films by focused-ion-beam (FIB)-induced chemical vapour deposition. By using ion-beam doses below 50 pC/μm² on a substrate of amorphous silicon, we have grown continuous films with thickness below 20 nm. The low-temperature electron transport properties were investigated by measuring current-voltage characteristics for temperatures down to 400 mK and in magnetic fields up to 8 T. FIB-deposited tungsten films are known to have an enhanced transition tem­perature compared to bulk tungsten [1], and films with thickness down to 50 nm have been investigated [2]. The films in this work are closer to the limit of two-dimensional system and are superconducting below 1 K, with a finite resistance at zero bias current. This work is supported by EPSRC. [1] E S Sadki, S Ooi, and K Hirata, Appl. Phys. Lett. 85, 6206 (2004); I J Luxmoore, I M Ross, A G Gullis, P W Fry, J Orr, P D Buckle, and J H Jefferson, Thin Solid Films 515, 6791 (2007). [2] W Li, J C Fenton, Y Wang, D W McComb, and P A Warburton, J. Appl. Phys. 104, 093913 (2008).

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