González Burguete, C;
(2019)
Direct growth of InAsGaSb type II superlattice photodiodes on silicon substrates (UCL Research Poster).
Presented at: UCL Doctoral School Research Poster Competition 2019, London, UK.
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UCL Research poster - 28.02.18.pdf - Submitted Version Download (2MB) | Preview |
Abstract
To develop a mid-wave infrared photodetector using type 2 superlattice structure with silicon substrate. ▪ To develop a tailor-made type 2 superlattice structure. ▪ To optimise fabrication methods. ▪ To develop a large focal plan array sensor. ▪ To develop a prototype.
| Type: | Poster |
|---|---|
| Title: | Direct growth of InAsGaSb type II superlattice photodiodes on silicon substrates (UCL Research Poster) |
| Event: | UCL Doctoral School Research Poster Competition 2019 |
| Location: | London, UK |
| Dates: | 27 - 28 February 2019 |
| Open access status: | An open access version is available from UCL Discovery |
| Publisher version: | https://www.grad.ucl.ac.uk/comp/2018-2019/research... |
| Keywords: | T2SL, GaAs |
| UCL classification: | UCL UCL > Provost and Vice Provost Offices UCL > Provost and Vice Provost Offices > UCL BEAMS UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Engineering Science UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Engineering Science > Dept of Electronic and Electrical Eng |
| URI: | https://discovery-pp.ucl.ac.uk/id/eprint/10084609 |
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