Proskuryakov, YY;
Savchenko, AK;
Safonov, SS;
Pepper, M;
Simmons, MY;
Ritchie, DA;
(2002)
Hole-hole interaction effect in the conductance of the two-dimensional hole gas in the ballistic regime.
PHYS REV LETT
, 89
(7)
, Article 076406. 10.1103/PhysRevLett.89.076406.
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Abstract
On a high-mobility two-dimensional hole gas (2DHG) in a GaAs/GaAlAs heterostructure we study the interaction correction to the Drude conductivity in the ballistic regime, k(B)Ttau/(h) over bar >1. It is shown that the "metallic" behavior of the resistivity (drho/dT>0) of the low-density 2DHG is caused by the hole-hole interaction effect in this regime. We find that the temperature dependence of the conductivity and the parallel-field magnetoresistance are in agreement with this description, and determine the Fermi-liquid interaction constant F-0(sigma) which controls the sign of drho/dT.
Type: | Article |
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Title: | Hole-hole interaction effect in the conductance of the two-dimensional hole gas in the ballistic regime |
Open access status: | An open access version is available from UCL Discovery |
DOI: | 10.1103/PhysRevLett.89.076406 |
Publisher version: | http://dx.doi.org/10.1103/PhysRevLett.89.076406 |
Language: | English |
Keywords: | PARALLEL MAGNETIC-FIELD, ELECTRON-SYSTEM, ALXGA1-XAS/GAAS HETEROSTRUCTURES, INTERMEDIATE TEMPERATURES, 2-DIMENSIONAL HOLES, METALLIC BEHAVIOR, CONDUCTIVITY, SCATTERING, TRANSITION, MOBILITY |
UCL classification: | UCL UCL > Provost and Vice Provost Offices > UCL BEAMS UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Engineering Science UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Engineering Science > Dept of Electronic and Electrical Eng |
URI: | https://discovery-pp.ucl.ac.uk/id/eprint/1311594 |
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